• 专利附录
  • 专利说明
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    • 专利摘要:
    GENERATION OF NON-REVERSIBLE STATUS IN A BIT CELL THAT HAS A FIRST MAGNETIC TUNNEL JOINT AND A SECOND MAGNETIC TUNNEL JOINT. A method for generating a non-reversible state in a bit cell that has a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a programming voltage to the first MTJ of the bit cell without applying the programming voltage to the second MTJ bit cell. A memory device includes a bit cell that has a first MTJ and a second MTJ and a set of programming circuits configured to generate a non-reversible state in the bit cell when applying a programming signal to a selected MTJ of the first MTJ and the second MTJ of the bit cell.
    公开号:BR112013002528B1
    申请号:R112013002528-0
    申请日:2011-08-03
    公开日:2020-12-22
    发明作者:Hari M.Rao；Jung Pill Kim；Seung H.Kang；Xiaochun Zhu；Tae Hyun Kim；Kangho Lee；Xia Li；Wah Nam Hsu；Jungwon Suh；Nicholas K. Yu；Matthew Michael Nowak；Steven M.Millendorf；Asaf Ashkenazi；Wuyang Hao
    申请人:Qualcomm Incorporated；
    IPC主号:
    专利说明:

    Field of the Invention
    [0001] The present invention is generally related to a single-time programmable bit cell based on a magnetic tunnel junction. Description of the State of the Art
    [0002] Advances in technology have resulted in smaller and more powerful computing devices. Such portable computing devices may include security architectures based on once-programmable elements, such as a non-volatile memory device that has one-time programmable memory cells (OTP). An OTP memory cell maintains a permanent state once the cell is programmed. For example, poly silicon fuses have been used as OTP elements. A poly silicon fuse memory cell can be programmed by applying voltage across the cell so that the cell is "burned out" during programming. For example, one-time programming is typically performed by burning silicon with a high current (for example, on the order of milliamps) for a relatively long time (for example, microseconds). A disadvantage of poly silicon fuses is that the integrity of the fuse is difficult to test before blowing the fuse. Another disadvantage of poly silicon fuses is that a blown state is visibly detectable, which can compromise safety. Summary of the Invention
    [0003] A single-time programmable element based on magnetic tunnel junction technology (MTJ) is described. The one-time programmable element is configured as a bit cell that has a first resistive memory element and a second resistive memory element. The first and second resistive memory elements can each be MTJs. The native unburned state of an MTJ has a higher resistance and the burned state of an MTJ has a lower resistance. A programming signal can be applied to one of the first MTJ and the second MTJ without applying the programming signal to the other between the first MTJ and the second MTJ in order to generate a non-reversible state in the bit cell. For example, the non-reversible state can be generated by the rupture of the tunnel oxide of one of the MTJs. When the tunnel oxide is broken, a state of permanent low resistance is created.
    [0004] In a specific embodiment, a method for generating a non-reversible state in a bit cell that has a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a programming voltage to the first bit cell MTJ without applying the programming voltage to the second MTJ of the bit cell.
    [0005] In another specific embodiment, a memory device includes a bit cell with magnetic tunnel junction (MTJ). The MTJ bit cell includes a first MTJ, a second MTJ, and a set of programming circuits configured to generate a non-reversible state in the bit cell by applying a programming signal to the MTJ selected from the first MTJ and the second MTJ of the bit cell.
    [0006] A specific advantage provided by at least one of the disclosed embodiments is that high-speed programming can be achieved by a non-reversible state being programmed into a bit cell that has a first magnetic tunnel junction (MTJ) and a second MTJ.
    [0007] Another specific advantage provided by at least one of the disclosed embodiments is that, before programming, the operation of the bit cell can be tested.
    [0008] Another specific advantage provided by at least one of the disclosed embodiments is improved security, in the sense that the visible detection of a programmed bit cell state is more difficult than for poly silicon fuses.
    [0009] Other aspects, advantages, and features of the present invention will become apparent upon examination of the entire application, which includes the following sections: Brief Description of the Figures, Detailed Description of the Invention and Claims. Brief Description of the Figures
    [0010] Figure 1 - is a block diagram of a specific illustrative embodiment of a memory device that includes a set of non-reversible state programming circuits and a memory cell that includes a first resistive memory element and a second element resistive memory.
    [0011] Figure 2 - is a diagram of a specific illustrative embodiment of a memory device that includes a set of non-reversible state programming circuits and a memory arrangement with once-programmable memory cells based on magnetic tunnel junction ( MTJ).
    [0012] Figure 3 - is a diagram of a specific illustrative embodiment of a system that includes a bit cell that has a first MTJ and a second MTJ and a set of non-reversible state programming circuits configured to provide a programmed voltage to the bit cell.
    [0013] Figure 4 - is a diagrammatic representation of specific illustrative embodiments of MTJ format and attributes of each MTJ format.
    [0014] Figure 5 - is a flow diagram of a specific illustrative embodiment of a method for programming a non-reversible state for a bit cell that has a first MTJ and a second MTJ.
    [0015] Figure 6 - is a block diagram of a specific illustrative embodiment of a device including a set of non-reversible state programming circuits configured to provide a programming voltage to one of a first MTJ and a second MTJ of a cell bits.
    [0016] Figure 7 - is a diagram of a specific illustrative embodiment of a manufacturing process that can be used to produce a wireless device that includes a set of non-reversible state programming circuits configured to program a non-reversible state for a bit cell having a first MTJ and a second MTJ. Detailed Description of the Invention
    [0017] With reference to Figure 1, a specific illustrative embodiment of a memory device that includes a set of non-reversible state programming circuits and a memory cell for storing data as non-reversible states in dual-element cells is described and denoted by 100. The memory device 100 includes a representative memory cell 102 and a set of non-reversible state programming circuitry 104. The memory cell 102 includes a first resistive memory element 106 and a second resistive memory element 108. In a specific embodiment, the first resistive memory element 106 is a first magnetic tunnel junction element (MTJ) and the second resistive memory element 108 is a second MTJ element. The non-reversible state programming circuitry 104 is configured to apply a programming signal to one of the first resistive memory element 106 and the second resistive memory element 108 of memory cell 102 to program a non-reversible state for the memory cell 102.
    [0018] In a specific embodiment, one-time programming capability is obtained by programming non-reversibly one of the two resistive memory elements 106, 108 in memory cell 102. For example, a programming voltage can be applied to the first resistive memory element 106 of the memory cell 102 by means of the non-reversible state programming circuitry 104 without applying the programming voltage to the second resistive memory element 108 of the memory cell 102, so as to generate a state non-reversible in memory cell 102. Alternatively, a programming voltage can be applied to the second resistive memory element 108 of memory cell 102 via non-reversible state programming circuitry 104 without applying the programming voltage to the first resistive memory element 106 of memory cell 102 in order to generate a non-reversible state in memory cell 102. For example, when o the first resistive memory element 106 is an MTJ, the programming voltage can cause the tunnel oxide of the first resistive memory element 106 to break, resulting in a permanent low resistance state of the first resistive memory element 106. Similarly, when the second resistive memory element 108 is an MTJ, the programming voltage can cause the tunnel oxide of the second resistive memory element 108 to break, resulting in a permanent low resistance state of the second memory element. resistive 108. In a specific embodiment, the tunnel oxide may be a magnesium oxide barrier layer within an MTJ and the programming voltage may be greater than approximately 1.3 volts.
    [0019] When the tunnel oxide of one of the resistive memory elements is broken, a state of permanent low resistance is created. For example, once burnt (for example, once tunnel oxide is broken), the resistance of the burnt resistive memory element can be approximately 250 ohms. The native unburned state of the resistive memory element may have a higher resistance, such as 2500 ohms. As shown in table 110, for example, if the first resistive memory element 106 is burned and the second resistive memory element 108 is not burned, the data stored in memory cell 102 may represent logic state "1". Alternatively, if the first resistive memory element 106 is not burned and the second resistive memory element 108 is burned, the data stored in memory cell 102 may represent logic state "0".
    [0020] In a specific embodiment, before programming a non-reversible state for memory cell 102, memory cell 102 can be used as a programmable cell several times (MTP - many-time programmable) when applying a voltage recording time (opposite to the programming voltage) for the first resistive memory element 106 or for the second resistive memory element 108 to store a reversible value in memory cell 102. Examples of MTP cells are also described with reference to Figure 4. The use of memory cell 102 as a once-programmable cell (OTP) or an MTP cell makes it possible to test the functioning of memory cell 102 by reading one of the first resistive memory element 106 and the second resistive memory element 108 after applying the recording voltage to the first resistive memory element 106 or the second resistive memory element 108.
    [0021] In a specific embodiment, when memory cell 102 is configured as an OTP memory cell, the non-reversible state can be detected by comparing the value read in the first resistive memory element 106 with the value read in the second element of memory. resistive memory 108 without the need for a separate reference cell. For example, in order to detect the reversible recording status of an MTJ, a reference voltage can be applied. When memory cell 102 is configured as an OTP memory cell, detection is self-reported, in the sense that complementary cell values are maintained in the first and second resistive memory elements 106, 108, so that the state is not reversible can be detected by comparing the value read on the first resistive memory element 106 with the value read on the second resistive memory element 108.
    [0022] Since memory cell 102 can be configured as an OTP memory cell or an MTP memory cell, the security architectures of electronic devices that incorporate the memory cell can be improved. For example, the hardware characteristics of a mobile electronic device, such as the joint test action group (JTAG), can be disabled after the final test using one-time programming capability. In addition, hardware keys from original equipment manufacturers can be used with one-time programming capability for provisioning, user information, digital rights management, etc. In addition, electronic devices incorporating memory cell 102 may be less susceptible to adjustment due to de-processing and less susceptible to data manipulation than poly silicon based fuse systems.
    [0023] Referring to Figure 2, a specific illustrative embodiment of a memory device that includes a set of non-reversible state programming circuits and a memory arrangement with once-programmable memory cells based on magnetic tunnel junction (MTJ ) is described and designated 200. The memory device 200 includes a set of non-reversible state programming circuits 202, a set of test circuits 204, and a memory array 206 with once-programmable cells (OTP). Memory array 206 may include other memory cells, such as other MTJ memory cells, which are non-OTP memory cells. OTP memory cells and other MTJ memory cells can be manufactured using the same techniques. The memory array 206 includes a first representative once-programmable cell 208 and a second representative once-programmable cell 210. In a specific embodiment, the first once-programmable cell 208 comprises a first dual magnetic tunnel junction (MTJ) bit cell, and the second once-programmable cell 210 comprises a second dual MTJ bit cell. The first once-programmable cell 208 includes a first resistive memory element 212, a first access transistor 213, a second resistive memory element 214, and a second access transistor 215. The second once-programmable cell 210 includes a third resistive memory element 216, a third access transistor 217, a fourth resistive memory element 218, and a fourth access transistor 219. In a specific embodiment, each resistive memory element 212-218 comprises a junction element magnetic tunnel. A word line 220 is coupled to the first access transistor 213, the second access transistor 215, the third access transistor 217, and the fourth access transistor 219.
    [0024] The non-reversible state programming circuitry 202 is coupled to the first once-programmable cell 208 via bit line 230 and bit line 232 and to the second once-programmable cell 210 via line bit 240 and bit line 242. The non-reversible state programming circuitry 202 is configured to apply a programming voltage, via bit line 230, to the first resistive memory element 212 of the first programmable cell one 208 without applying the programming voltage to the second resistive memory element 214 of the first programmable cell once, 208, so as to generate a first non-reversible state (for example, logic “0”) in the first programmable cell once 208. Alternatively, the non-reversible state programming circuitry 202 may apply the programming voltage, via bit line 232, to the second resistive memory element 214 of the pres first one-time programmable cell 208 without applying the programming voltage to the first resistive memory element 212 of the first one-time programmable cell 208, in order to generate a second non-reversible state (for example, logic “1”) in the first cell programmable once 208.
    [0025] Likewise, the non-reversible state programming circuitry 202 is configured to apply the programming voltage, via bit line 240, to the third resistive memory element 216 of the second programmable cell once only 210 without applying the programming voltage to the fourth resistive memory element 218 of the second single programmable cell 210, in order to generate the first non-reversible state in the second single programmable cell 210. Alternatively, the state programming circuitry non-reversible 202 can apply the programming voltage, by means of bit line 242, to the fourth resistive memory element 218 of the second programmable cell one time 210 without applying the programming voltage to the third resistive memory element 216 of the second programmable cell a single time 120, in order to generate the second non-reversible state in the second programmable cell a single time 210.
    [0026] In a specific embodiment, the non-reversible state can be detected in the first programmable cell only once 208 by comparing the value read in the first resistive memory element 212 with the value read in the second resistive memory element 214. In one embodiment specific, the non-reversible state of the first once-programmable cell can be detected without a separate reference cell.
    [0027] For example, the detection of the first once-programmable cell 208 is self-reported in the sense that complementary cell values are maintained in the first and second resistive memory elements 212, 214 (eg, tunneling oxide) one of the resistive memory elements 212, 214 is burned, while the tunnel oxide of the other of the resistive memory elements 212, 214 is unburned). The non-reversible state can be detected by comparing the value read on the first resistive memory element 212 with the value read on the second resistive memory element 214 (for example, when comparing a signal on the bit line 230 with a signal on the bit line 232). There is no need for a separate reference voltage to detect the reversible states of resistive memory elements 212, 214.
    [0028] Test circuitry 204 can be configured to test one or more cells in memory array 206 prior to programming. For example, prior to applying the programming voltage to the first resistive memory element 213 of the first once-programmable cell 208, a recording voltage can be applied to the first resistive memory element 212 to store a reversible value in the first programmable cell one only once 208. After applying the recording voltage to the first resistive memory element 212, the first resistive memory element 212 can be read to test the operation of the first programmable cell once. 208. Alternatively, before applying the recording voltage programming to the second resistive memory element 214 of the first once-programmable cell 208, a recording voltage can be applied to the second resistive memory element 214 to store a reversible value in the first once-programmable cell 208. After applying the voltage the second resistive memory element 214, the second resistive memory element 214 can be read in order to test the operation of the first programmable cell only once 208.
    [0029] In a specific embodiment, the third resistive memory element 216 and the fourth resistive memory element 218 can be substantially similar to the first resistive memory element 212 and the second resistive memory element 214. In a specific embodiment, the elements resistive memory modules 216 and 218 can be used as programmable memory elements multiple times by providing a recording voltage, where the recording voltage is lower than the programming voltage (for example, it has a lower magnitude than that of the programming voltage), causing resistive memory element 216 or 218 to enter a reversible state.
    [0030] When using MTJ elements in the bit cells of a memory array for one-time programming capability, high-speed programming can be achieved due to the smaller currents and shorter times required to program MTJ elements when compared with higher currents and longer times needed to program poly silicon fuse elements.
    [0031] With reference to Figure 3, a specific illustrative embodiment of a system 300 includes a bit cell 302 that has a first resistive memory element 310 and a second resistive memory element 314 and also includes a set of programming circuits for non-reversible state 304 configured to provide a programming voltage to bit cell 302.
    [0032] Programming circuit set 304 includes a set of reading column selection circuits 320, a set of detection amplifier circuits 322, a set of word line generation circuits 324, a set of reading circuits recording data path 326, a recording data circuit set 328, a recording column selection circuit set 330, and a bit line pair 332. The reading column selection circuit set 320 is configured to receive address data 340 and read data 342, and to provide an input to the detection amplifier circuitry 322. The detection amplifier circuitry 322 is configured to amplify a differential signal on the pair of bits 332 and to generate a data output signal (Do). Recording data circuitry 328 is configured to retain received data input (Di) 362 and a recording signal 360. Recording column selection circuitry 330 is configured to retain received address data 340. Recording data path set 326 is responsive to recording data circuit set 328 and recording column selection circuit set 330 to apply signals to bit line pair 332. The generation circuit set word lines 324 is configured to selectively polarize a word line 334 in response to address data 340, a reading signal 350, and recording signal 360.
    [0033] Bit cell 302 includes the first resistive memory element 310 and the second resistive memory element 314. In a specific embodiment, the first resistive memory element 310 comprises a first magnetic tunnel junction (MTJ) and the second element resistive memory comprises a second MTJ. Bit cell 302 includes a first access transistor 312 coupled to the first MTJ 310 and a second access transistor 316 coupled to the second MTJ 314. In a specific embodiment, the first access transistor 312 can have a tunnel oxide with a thickness oxide T1 311 and the second access transistor 316 may have a tunnel oxide with an oxide thickness T2 315. The oxide thickness T1 311 may be substantially similar to the oxide thickness T2 315. The first access transistor 312 and the second access transistor 316 are responsive to word line 334.
    [0034] During operation, the non-reversible state programming circuitry 304 may apply a programming voltage to the first MTJ 310 of bit cell 302 without applying the programming voltage to the second MTJ 314 of bit cell 302, in accordance with in order to generate a non-reversible state in bit cell 302. Alternatively, the non-reversible state programming circuitry 304 can apply the programming voltage to the second MTJ 314 of bit cell 302 without applying the programming voltage to the first MTJ 310 of bit cell 302, so as to generate the non-reversible state in bit cell 302.
    [0035] In a specific embodiment, for example, the programming voltage can cause the tunnel oxide of the first MTJ 310 to break, resulting in a permanent low resistance state of the first MTJ 310. In a specific embodiment, the oxide The tunnel voltage may be a magnesium oxide barrier layer and the programming voltage may be greater than approximately 1.3 volts. After the tunnel oxide of the first MTJ 310 has been broken, a permanent short or low resistance state of the first MTJ 310 is created. Once burned, for example, the resistance of the first burned MTJ 310 can be approximately 250 ohms. The native unburned state of the second MTJ 314 may have a higher resistance, such as 2500 ohms. In a specific embodiment, the state of the first MTJ 310 (e.g., burnt) can be maintained as complementary to the state of the second MTJ 314 (e.g., unburnt). The detection of bit cell 302 is self-reported in the sense that the non-reversible state can be detected by comparing the value read in the first MTJ 310 with the value read in the second MTJ 314 (for example, when comparing a signal in the pair of bit lines 332) without a separate reference voltage.
    [0036] Referring to Figure 4, format-specific illustrative embodiments for a one-time programmable magnetic tunnel junction (MTJ) bit cell are described and generally referred to as 400. A first MTJ has a substantially ellipsoidal shape 402, a second MTJ has a substantially circular shape 404, and a third MTJ has a substantially circular shape 406 smaller than that of the second MTJ. The arrows show examples of magnetic moments of a free layer of each MTJs 402-406 as illustrative, non-limiting examples.
    [0037] The MTJ 402 ellipsoidal shape has a bistable state when the MTJ 402 is unburned. When in the bistable state, the MTJ 402 may have a low low R resistance (for example, approximately 2500 ohms) or a high R high resistance (for example, greater than 3000 ohms). In the burned state, the MTJ 402 may have a burnt resistance resistance R Burned (for example, approximately 250 ohms). In a specific embodiment, the ellipsoidal MTJ 402 has a first axis length 403 greater than the second axis length 405 to allow alignment of the magnetic moments on the MTJ 402 in parallel and anti-parallel states, which correspond to a first programmable state several- reversible (MTP) and a second reversible MTP state.
    [0038] In a specific embodiment, the second MTJ with circular shape 404 is in a monostable state when the second MTJ 404 is unburned. In the unburned state, for example, the second MTJ 404 can have a resistance halfway between the high resistance R High (for example, greater than 3000 ohms) of the second MTJ 404 and the low resistance R low (for example, of 2500 ohms) of the second MTJ 404. In the burned state, the second MTJ 404 can have a resistance to the burnt resistance R Burned (for example, approximately 260 ohms).
    [0039] In a specific embodiment, the third circular MTJ 406 has a smaller diameter than the circular MTJ 404 so that the third MTJ 406 is in a metastable state when the third MTJ 406 is unburned. In the unburned state, for example, the third MTJ 406 can have a resistance at a point between the high R High resistance (for example, greater than 3000 ohms) of the third MTJ 406 and the low R Low resistance (for example, of 2500 ohms) of the third MTJ 406. In the burned state, the third MTJ 406 can have a burnt resistance resistance R Burned (for example, approximately 250 ohms).
    [0040] With reference to Figure 5, a flow diagram of an illustrative embodiment of a method for programming a non-reversible state for a bit cell that has a first magnetic tunnel junction (MTJ) and a second MTJ is described and named by 500. As an illustrative example, method 500 can be performed by the memory device of Figure 1, the memory device of Figure 2, the system of Figure 3, or any combination thereof.
    [0041] Before a programming voltage is applied to the bit cell, a recording voltage can be applied to the first MTJ in order to store a reversible value in the bit cell, at 502, and the first MTJ can be read so testing the operation of the bit cell after applying the recording voltage to the first MTJ, at 504. In a specific embodiment, the bit cell can be memory cell 102 of Figure 1, the first single programmable cell 208 of Figure 2, or the bit cell 302 of Figure 3. In a specific embodiment, the first MTJ can be the first resistive memory element 106 of Figure 1, the first resistive memory element 212 of Figure 2, or the first element of resistive memory 310 of Figure 3, and the second MTJ can be the second resistive memory element 108 of Figure 1, the second resistive memory element 214 of Figure 2, or the second resistive memory element 314 of Figure 3.
    [0042] For example, test circuitry 204 can be configured to test one or more cells in memory array 206 before programming any of the cells in memory array 206. Before applying the programming voltage, for example , a recording voltage can be applied to the first resistive memory element 212 in order to store a reversible value in the first programmable cell once 208. After applying the recording voltage to the first resistive memory element 212, the first memory element resistive 212 can be read to test the operation of the first programmable cell once 208. Alternatively, the recording voltage can be applied to the second resistive memory element 214 in order to store a reversible value for the first programmable cell once 208 After applying the recording voltage to the second resistive memory element 214, the second resistive memory element 214 can be read p To test the operation of the first programmable cell once 208.
    [0043] A non-reversible state can be generated in the bit cell by applying the programming voltage to the first MTJ of the bit cell without applying the programming voltage to the second MTJ of the bit cell, in 506. In one embodiment the programming voltage can be generated by the non-reversible state programming circuitry 104 in Figure 1, by the non-reversible state programming circuitry 202 in Figure 2, or by the non-reversible state programming circuitry 304 of Figure 3.
    [0044] The first MTJ and the second MTJ can be maintained as complementary cell values, at 508. In a specific embodiment, for example, the programming voltage can cause a tunnel oxide, such as the tunnel oxide that has T1 311 thickness of the first MTJ 310 breaks, resulting in a permanent low resistance state of the first MTJ 310. After the tunnel oxide of the first MTJ 310 has been broken, a short or low resistance state of the first MTJ 310 is created . Once burned, for example, the resistance of the first burned MTJ 310 can be approximately 250 ohms. The native unburned state of the second MTJ 314 may have a higher resistance, such as 2500 ohms. Accordingly, the cell value of the first MTJ 310 (eg, burnt) can be maintained as complementary to the cell value of the second MTJ 314 (eg, unburnt).
    [0045] The non-reversible state can be detected by comparing the value read in the first MTJ with the value read in the second MTJ of the bit cell, at 510. For example, the detection amplifier circuitry 322 can be configured to generate the output Do in response to a comparison of a signal (e.g., a current or voltage) read on the first MTJ 310 and a signal read on the second MTJ 314.
    [0046] Figure 6 is a block diagram of an embodiment of a wireless communication device 600 that has a set of non-reversible state programming circuits and a bit cell including a first magnetic tunnel junction (MTJ) and a second MTJ 664. The wireless communication device 600 can be implemented as a portable wireless electronic device that includes a 610 processor, such as a digital signal processor (DSP), coupled with a 632 memory.
    [0047] The set of non-reversible state programming circuits and the bit cell including the first and second MTJs 664 may include one or more of the components, memories, or circuits of Figures 1-4, which operate according to Figure 5, or any combination of these. The non-reversible state programming circuitry and bit cell including first and second MTJs 664 may be in memory 632 or may be a separate device. Although the non-reversible state programming circuitry and the bit cell that includes the first and second MTJs 664 are shown integrated with memory 632, in other embodiments, the non-reversible state programming circuitry and the cell bits including the first and second MTJs 664 can be external to memory 632, as embedded in processor 610.
    [0048] In a specific embodiment, a display controller 626 is coupled to processor 610 and to a display device 628. An encoder / decoder (CODEC) 634 can also be coupled to processor 610. A speaker 636 and a microphone 638 can be coupled to CODEC 634. A wireless controller 640 can be coupled to processor 610 and a wireless antenna 642.
    [0049] Memory 632 may include a computer-readable medium that stores instructions (for example, software 635) that are executable by a processor, such as processor 610. For example, software 635 may include instructions that are executable by a computer to apply a programming voltage to a first MTJ (for example, the first resistive memory element 106 in Figure 1) of a bit cell (for example, memory cell 102 in Figure 1) without applying the programming to a second MTJ (for example, the second resistive memory element 108 of Figure 1) of the bit cell, so as to generate a non-reversible state in the bit cell.
    [0050] In a specific embodiment, signal processor 610, display controller 626, memory 632, CODEC 634, and wireless controller 640 are included in a packaged system or on-chip system 622 device In a specific embodiment, an input device 630 and a power supply 644 are coupled to the on-chip system device 622. Furthermore, in a specific embodiment, as shown in Figure 6, the display device 628, the input device 630, speaker 636, microphone 638, wireless antenna 642, and power supply 644 are external to the on-chip system device 622. However, each of the display device 628, the input device 630, speaker 636, microphone 638, wireless antenna 642, and power supply 644 can be coupled to a component of the on-chip system device 622, such as an interface or a controller.
    [0051] The devices and functionalities revealed above can be designed and configured in computer files (such as, for example, RTL, GDSII, GERBER, etc.) stored in computer-readable media. Some or all of the files can be provided for manufacturing operators who manufacture devices based on such files. Resulting products include semiconductor blades that are then cut into a semiconductor matrix shape and packaged on a semiconductor chip. The chips are then used in the devices described above.
    [0052] Figure 7 shows a specific illustrative embodiment of an electronic device manufacturing process 700. Physical device information 702 is received in manufacturing process 700, such as on a search computer 706. Physical device information 702 it can include design information representing at least one physical property of a semiconductor device, such as memory device 100 in Figure 1, memory device 200 in Figure 2, system 300 in Figure 3, or any combination thereof. For example, physical device information 702 can include physical parameters, material characteristics, and structural information, which are entered via a user interface 704 coupled to the search computer 706. The search computer 706 includes a 708 processor, such as one or more processing cores, coupled to a computer-readable medium, such as a 710 memory. Memory 710 can store computer-readable instructions that are executable to make processor 708 transform physical device information 702 from to conform to a file format and to generate a 712 library file.
    [0053] In a specific embodiment, the library file 712 includes at least one data file that includes the transformed design information. For example, library file 712 may include a library of semiconductor devices including a device that includes memory device 100 in Figure 1, a device that includes memory device 200 in Figure 2, a device that includes system 300 from Figure 3, or any combination of these, which is provided for use with an electronic design automation tool (EDA) 720.
    [0054] The library file 712 can be used in conjunction with the EDA tool 720 on a project computer 714 including a processor 716, such as one or more processing cores, coupled to a memory 718. The tool EDA 720 can be stored as executable instructions per processor in memory 718 to allow the user of the project computer 714 to design a circuit including a device that includes memory device 100 in Figure 1, a device that includes memory device 200 in Figure 2, a device that includes system 300 in Figure 3, or any combination thereof, of library file 712. For example, the user of the design computer 714 can enter circuit design information 722 through a user interface 724 coupled to the computer design 714. Circuit design information 722 can include design information representing at least one physical property of a device without iconductor, such as a device including the memory device 100 of Figure 1, a device including the memory device 200 of Figure 2, a device including the system 300 of Figure 3, or any combination thereof. For purposes of illustration, the circuit design property may include the identification of specific circuits and relationships to other elements in a circuit design, positioning information, characteristic size information, interconnection information, or other information that represents a property physics of a semiconductor device.
    [0055] The design computer 714 can be configured to transform design information, including circuit design information 722, in order to conform to a file format. For illustration purposes, the file formation may include a binary database file format that represents planar geometric shapes, text labels, and other information about a circuit layout in a hierarchical format, such as a file format. Graphic Data System (GDSII). The design computer 714 can be configured to generate a data file that includes the transformed design information, such as a GDSII file 726, that includes information describing the memory device 100 in Figure 1, the memory device 200 in Figure 2, the system 300 of Figure 3, or any combination thereof, in addition to other circuits or information. For purposes of illustration, the data file may include information corresponding to an on-chip system (SOC) which includes the memory device 100 of Figure 1 and which also includes additional electronic circuits and components within the SOC.
    [0056] The GDSII file 726 can be received in a manufacturing process 728 for manufacturing the memory device 100 of Figure 1, the memory device 200 of Figure 2, system 300 of Figure 3, or any combination of these, from according to the information transformed in the GDSII file 726. For example, the device manufacturing process may include providing the GDSII file 726 to a mask manufacturer 730 for creating one or more masks, such as masks for use with photolithography processing. shown, for example, as a representative mask 732. Mask 732 can be used during the manufacturing process to generate one or more blades 734, which can be tested and separated into matrices, such as, for example, a representative matrix 736. The matrix 736 includes a circuit that includes a device that includes the memory device 100 of Figure 1, a device that includes the memory device 200 of Figure 2, a device that includes the system 300 of Figure 3, or any combination thereof.
    [0057] The matrix 736 can be provided with a packaging process 738, in which the matrix 736 is incorporated into a representative package 740. For example, packet 740 can include single array 736 or multiple arrays, such as a system packaged (SIP) arrangement. The 740 package can be configured to conform to one or more standards or specifications, such as the standards of the Joint Electronic Device Engineering Council (JEDEC).
    [0058] Information regarding the 740 package can be distributed to several product designers, such as, for example, through a component library stored on a 746 computer. The 746 computer can include a 748 processor, such as one or more cores processors, coupled with a 750 memory. A printed circuit board (PCB) tool can be stored as executable instructions per processor in the 750 memory to process PCB 742 design information received from the computer 746 user via a user 744. PCB design information 742 may include physical positioning information for a semiconductor device packaged on a circuit board, the semiconductor device packaged corresponding to package 740 including memory device 100 of Figure 1, memory device 200 of Figure 2, the system 300 of Figure 3, or any combination thereof.
    [0059] Computer 746 can be configured to transform PCB 742 design information to generate a data file, such as a GERBER 752 file, with data that includes physical positioning information from a semiconductor device packaged on a board circuit, as well as the layout of electrical connections, such as tracks and tracks, in which the packaged semiconductor device corresponds to package 740, which includes memory device 100 in Figure 1, memory device 200 in Figure 2, the system 300 of Figure 3, or any combination thereof. In other embodiments, the data file generated by the transformed PCB design information may have a format other than the GERBER format.
    [0060] The GERBER 752 file can be received in a 753 plate assembly process and used in the creation of PCBs, such as a representative PCB 756, manufactured according to the design information stored within the GERBER 752 file. For example, the GERBER 752 file can be loaded on one or more machines to perform several steps in a PCB production process. The PCB 756 can be filled with electronic components that include the 740 package to form a 758 printed circuit board (PCA).
    [0061] PCA 758 can be received in a 760 product manufacturing process and integrated with one or more electronic devices, such as, for example, a first representative electronic device 762 and a second representative electronic device 764. As an illustrative, non-limiting example, the first representative electronic device 762, the second representative electronic device 764, or both, can be selected from the group of a set-top box, a music player, a video device, a unit entertainment device, a navigation device, a communication device, a personal digital assistant (PDA), a fixed location data unit, and a computer, in which the non-reversible state programming circuitry and the bit cell , which includes the first and second MTJs 664 in Figure 5, are integrated. As another illustrative, non-limiting example, one or more of the electronic devices 762 and 764 can be remote units, such as mobile phones, portable personal communication systems (PCS) units, portable data units, such as personal data assistants, devices enabled by the global positioning system (GPS), navigation devices, fixed location data units, such as measurement reading equipment, or any other device that stores or retrieves data or computer instructions, or any combination thereof. Although Figure 7 shows remote units in accordance with the teachings of the invention, the invention is not limited to these exemplary shown units. Embodiments of the invention can be used suitably in any device that includes an active integrated circuitry including memory and an on-chip circuitry.
    [0062] A device that includes the memory device 100 of Figure 1, a device that includes the memory device 200 of Figure 2, a device that includes the system 300 of Figure 3, or any combination of these can be manufactured, processed, and incorporated into an electronic device, as described in illustrative process 700. One or more aspects of the embodiments disclosed with respect to Figures 1-4 can be included at various stages of processing, such as within library file 712, file GDSII 726, and file GERBER 752, as well as stored in memory 710 of the search computer 706, in the memory 718 of the design computer 714, in the memory 750 of the computer 746, in the memory of one or more other computers or processors (not shown) used in the various stages, such as in the plate assembly process 754, and also incorporated into one or more other physical embodiments such as mask 732, matrix 736, package 740, PCA 758, other products such as prototype circuits or devices (not shown), or any combination thereof. Although several production stages representative of a physical design project to a final product are shown, in other embodiments less stages can be used or additional stages can be included. Similarly, process 700 can be performed by a single entity or by one or more entities that perform multiple stages of process 700.
    [0063] Those skilled in the art would also understand that the various blocks, configurations, modules, circuits and illustrative logic algorithm steps described in connection with the embodiments described here can be implemented as electronic hardware, computer software executed by a processor, or combinations both. Various components, blocks, configurations, modules, circuits and illustrative steps have been described above generally in terms of their functionality. Whether such functionality is implemented as hardware or executable instructions per processor depends on the specific application and design restrictions imposed on the system as a whole. Those skilled in the art can implement the functionality described in various ways for each specific application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
    [0064] The method or algorithm steps described in connection with the embodiments disclosed herein can be incorporated directly into hardware, a software module executed by a processor, or a combination of the two. A software module can reside in random access memory (RAM), flash memory, read memory (ROM), programmable read memory (PROM), programmable and erasable read memory (EPROM), programmable and electrically read memory erasable (EEPROM), in registers, hard disk, removable disk, compact disk read memory (CD-ROM), or any form of non-transient storage medium known in the art. An exemplary storage medium is coupled to the processor so that the processor can read information from, and write information to, the storage medium. Alternatively, the storage medium can be integrated with the processor. The processor and storage medium can reside on an application specific integrated circuit (ASIC). The ASIC can reside on a computing device or on a user terminal. Alternatively, the processor and the storage medium can reside as discrete components in a computing device or a user terminal.
    [0065] The previous description of the disclosed embodiments is presented to allow anyone skilled in the art to manufacture or use the disclosed embodiments. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the principles defined herein can be applied to other embodiments without abandoning the scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown here, but should be given the broadest scope compatible with the principles and aspects defined by the appended claims.
    权利要求:
    Claims (15)
    [0001]
    1. Method comprising: applying a programming voltage to a first magnetic tunnel junction (MTJ) (310) of a bit cell without applying the programming voltage to a second MTJ (314) of the bit cell (302) to generate a non-reversible state in the bit cell (302); the method characterized by the fact that it additionally comprises: detecting the non-reversible state when comparing a first value read on the first MTJ (310) and received on a first input of a differential amplifier (322) with a second value read on the second MTJ ( 314) and received at a second input of the differential amplifier (322), where the first value corresponds to a first voltage of a first bit line (230, 332BL) coupled to the first MTJ (310) and the second value corresponds to a second voltage of a second bit line (232, 332BL #) coupled to the second MTJ (314).
    [0002]
    2. Method, according to claim 1, characterized by the fact that the programming voltage causes a tunnel oxide of the first MTJ (310) to break, resulting in a permanent low resistance state of the first MTJ (310).
    [0003]
    3. Method according to claim 1, characterized by the fact that it further comprises maintaining the first MTJ (310) and the second MTJ (314) as complementary cell values.
    [0004]
    4. Method according to claim 1, characterized by the fact that the non-reversible state corresponds to a burnt state of the first MTJ (310).
    [0005]
    Method according to claim 1, characterized in that the detection of the non-reversible state of the bit cell (302) is carried out without a separate reference cell.
    [0006]
    6. Method according to claim 1, characterized in that it further comprises, before applying the programming voltage, applying a recording voltage to the first MTJ (310) to store a value for the bit cell (302) .
    [0007]
    7. Method according to claim 6, characterized in that it further comprises, after applying the recording voltage to the first MTJ (310), reading the first MTJ (310) to test a bit cell operation (302) .
    [0008]
    8. Method according to claim 1, characterized by the fact that the bit cell (302) is inside a memory with a programmable capacity only once, and additionally comprising testing one or more memory cells before programming the bit cell (302).
    [0009]
    9. Method according to claim 1, characterized by the fact that the first MTJ (402) has a first axis length (403) greater than a second axis length (405) to enable the switching of the first MTJ ( 310) from a first unscheduled state to a second unscheduled state.
    [0010]
    10. Method according to claim 9, characterized by the fact that the first MTJ (402) is ellipsoidal.
    [0011]
    11. Method according to claim 1, characterized in that the first MTJ (404, 406) is substantially circular, and further comprises testing the bit cell by comparing the bit cell to an external reference.
    [0012]
    12. Method according to claim 1, characterized by the fact that the first MTJ (212) and the second MTJ (214) are within an arrangement of MTJs (206), the arrangement of MTJs additionally comprising a third MTJ ( 216) which is substantially similar to the first MTJ (212) and the second MTJ (214), and further comprising using the third MTJ (216) as a programmable memory element multiple times by providing a recording voltage for the third MTJ ( 216), in which the recording voltage is less than the programming voltage and causes the third MTJ (216) to enter a reversible state.
    [0013]
    13. Apparatus comprising: mechanisms for storing a data value, comprising a first magnetic tunnel junction (MTJ) and a second MTJ; mechanisms for generating a non-reversible state in the mechanisms for storing when applying a programming voltage to the first MTJ without applying the programming voltage to the second MTJ; the apparatus characterized by the fact that it additionally comprises: mechanisms for detecting the non-reversible state when comparing a first value read on the first MTJ and received on the first input of a differential amplifier with a second value read on the second MTJ and received on a second input of the differential amplifier, where the first value corresponds to a first voltage of a first bit line coupled to the first MTJ and the second value corresponds to a second voltage of a second bit line coupled to the second MTJ.
    [0014]
    Apparatus according to claim 13, characterized in that it additionally comprises a first access transistor (312) coupled to the first MTJ (310) and a second access transistor (316) coupled to the second MTJ (314).
    [0015]
    Apparatus according to claim 14, characterized in that the first access transistor (312) has an oxide thickness that is substantially similar to an oxide thickness of the second access transistor (316).
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    同族专利:
    公开号 | 公开日
    US8797792B2|2014-08-05|
    US8547736B2|2013-10-01|
    HUE043517T2|2019-08-28|
    CN103081020B|2016-06-29|
    WO2012018918A2|2012-02-09|
    IN2013MN00318A|2015-05-29|
    KR101445989B1|2014-09-29|
    TWI553647B|2016-10-11|
    EP2601655A2|2013-06-12|
    KR20130036771A|2013-04-12|
    CA2807392A1|2012-02-09|
    RU2553087C2|2015-06-10|
    JP2015092430A|2015-05-14|
    SG187688A1|2013-03-28|
    EP2601655B1|2019-01-02|
    TW201214436A|2012-04-01|
    JP2013537679A|2013-10-03|
    BR112013002528A2|2016-05-31|
    US20140010006A1|2014-01-09|
    US20120033490A1|2012-02-09|
    AU2011285791A1|2013-02-28|
    ES2718487T3|2019-07-02|
    JP5670570B2|2015-02-18|
    HK1181916A1|2013-11-15|
    RU2013109271A|2014-09-10|
    CN103081020A|2013-05-01|
    WO2012018918A3|2012-05-31|
    CA2807392C|2014-12-16|
    TW201511018A|2015-03-16|
    TWI467575B|2015-01-01|
    AR082475A1|2012-12-12|
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    法律状态:
    2018-12-26| B06F| Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]|
    2020-09-08| B09A| Decision: intention to grant [chapter 9.1 patent gazette]|
    2020-12-22| B16A| Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 03/08/2011, OBSERVADAS AS CONDICOES LEGAIS. |
    优先权:
    申请号 | 申请日 | 专利标题
    US12/849,043|2010-08-03|
    US12/849,043|US8547736B2|2010-08-03|2010-08-03|Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction|
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